MMEPU-355-10-HE-D30

Low processing heat resulting in less damage to the cut surface so reaches a smoother surface; all-in-one laser design, easy to install and maintain; superior beam quality can achieve deeper and faster processing, more advantageous in cutting SiC, diamond and other super hard materials; self-cleaning system of resonant cavity solves the problem of power attenuation to maintain a long service life.

Features:

  • Single pulse energy > 1mj
  • Superior beam quality M²<1.3
  • Ultra-long service life and power stability
  • All-in-one machine mechanism, small size

Application

  • SiC wafer scribing
  • Diamond cutting – Slicing, coring, sawing, faceting, 4 processing
  • Cutting of super hard materials – PcBN, PCD, SCD, CVD, SiC, etc.

 

Description

Model No.MMEPU-355-10-HE-D30
Optical Characteristics 
Wavelength (nm)355nm
Average Power (W)>10W@10kHz
Single Pulse Energy (uJ)~1000uj@10kHz
Pulse Width (ns)<30ns@10kHz
Frequency Range10-100kHz
Pulse Stability<3% rms
Long Term Stability<±3%
Beam Characteristics 
Polarization RatioHorizontal;>100:1
Beam Diameter~0.9mm(at exit)
Beam Circularity>90%
Spatial ModeTEM00, M² < 1.3
Operating Specifications 
Warm-up Time<15 minutes from cold start
Electrical RequirementDC17.5V,350W
Ambient Temperature10-35℃,RH<80%
Storage Conditions-10-40℃,RH<90%
Physical Characteristics 
Cooling SystemWater-Cooled
Water Temperature (laser inlet)25℃

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Model No.MMEPU-355-10-HE-D30
Optical Characteristics 
Wavelength (nm)355nm
Average Power (W)>10W@10kHz
Single Pulse Energy (uJ)~1000uj@10kHz
Pulse Width (ns)<30ns@10kHz
Frequency Range10-100kHz
Pulse Stability<3% rms
Long Term Stability<±3%
Beam Characteristics 
Polarization RatioHorizontal;>100:1
Beam Diameter~0.9mm(at exit)
Beam Circularity>90%
Spatial ModeTEM00, M² < 1.3
Operating Specifications 
Warm-up Time<15 minutes from cold start
Electrical RequirementDC17.5V,350W
Ambient Temperature10-35℃,RH<80%
Storage Conditions-10-40℃,RH<90%
Physical Characteristics 
Cooling SystemWater-Cooled
Water Temperature (laser inlet)25℃