Model No. | MMEPU-355-10-HE-D30 | |
Optical Characteristics | ||
Wavelength (nm) | 355nm | |
Average Power (W) | >10W@10kHz | |
Single Pulse Energy (uJ) | ~1000uj@10kHz | |
Pulse Width (ns) | <30ns@10kHz | |
Frequency Range | 10-100kHz | |
Pulse Stability | <3% rms | |
Long Term Stability | <±3% | |
Beam Characteristics | ||
Polarization Ratio | Horizontal;>100:1 | |
Beam Diameter | ~0.9mm(at exit) | |
Beam Circularity | >90% | |
Spatial Mode | TEM00, M² < 1.3 | |
Operating Specifications | ||
Warm-up Time | <15 minutes from cold start | |
Electrical Requirement | DC17.5V,350W | |
Ambient Temperature | 10-35℃,RH<80% | |
Storage Conditions | -10-40℃,RH<90% | |
Physical Characteristics | ||
Cooling System | Water-Cooled | |
Water Temperature (laser inlet) | 25℃ |
MMEPU-355-10-HE-D30
Low processing heat resulting in less damage to the cut surface so reaches a smoother surface; all-in-one laser design, easy to install and maintain; superior beam quality can achieve deeper and faster processing, more advantageous in cutting SiC, diamond and other super hard materials; self-cleaning system of resonant cavity solves the problem of power attenuation to maintain a long service life.
Features:
- Single pulse energy > 1mj
- Superior beam quality M²<1.3
- Ultra-long service life and power stability
- All-in-one machine mechanism, small size
Application
- SiC wafer scribing
- Diamond cutting – Slicing, coring, sawing, faceting, 4 processing
- Cutting of super hard materials – PcBN, PCD, SCD, CVD, SiC, etc.