Model No. | MMEPG-532-16-HE | MMEPG-532-20-HE |
Optical Characteristics | ||
Wavelength (nm) | 532nm | |
Average Power (W) | >16W@10kHz | >20W@10kHz |
Single Pulse Energy (uJ) | ~1600uJ@10kHz | ~2000uJ@10kHz |
Pulse Width (ns) | ~20ns@10kHz | |
Repitition Rate | 7kHz-100kHZ | |
Pulse Stability | <3% rms | |
Long Term Stability | <±3% | |
Beam Characteristics | ||
Polarization Ratio | Vertical;>100:1 | |
Beam Diameter | ~1mm(at exit) | |
Beam Circularity | >90% | |
Spatial Mode | TEM00, M²< 1.3 | |
Operating Specifications | ||
Warm-up Time | <15 minutes from cold start | |
Electrical Requirement | DC17.5,350W | |
Ambient Temperature | 10-35℃,RH<80% | |
Storage Conditions | -10-40℃,RH<90% | |
Physical Characteristics | ||
Cooling System | Water-Cooled | |
Water Temperature (laser inlet) | 25℃ |
MMEPG-532-16-HE-D20
Higher peak power of the laser enables greater processing capability and efficiency, particularly in cutting ultra-hard materials, like silicon carbide and diamond.The laser system is highly integrated, incorporating the laser, power supply, Q-switching control, and protection circuits into a compact and easy-to-install unit, facilitating maintenance. The internal resonator cavity is equipped with a self-cleaning system and stable cavity design, addressing power attenuation issues and ensuring an extended lifespan.
Features:
Single pulse energy>1.6mj
Superior beam quality M²<1.3
Ultra-long service life and power stability
All-in-one compact design
Application:
Diamond slicing&coring
Diamond shape cutting(4P processing for 4mm+diamonds)
Carbon fiber cutting
Sic wafer dicing
Super hard material cutting