Model No. | MMEPU-355-15 |
Optical Characteristics | |
Wavelength (nm) | 355nm |
Average Power (W) | >15W@10kHz |
Single Pulse Energy (uJ) | ~1500uJ@60kHz |
Pulse Width (ns) | 30ns@60kHz |
Repetition Rate | 10-20kHz |
Pulse Stability | <3%rms |
Long Term Stability | <±3% |
Beam Characteristics | |
Polarization Ratio | Horizontal;>100:1 |
Beam Diameter | 〜1mm(at exit) |
Beam Circularity | >90% |
Spatial Mode | TEM00, M² <1.3 |
Operating Specifications | |
Warm-up Time | <15 minutes from cold start |
Electrical Requirement | DC17.5V,350W |
Ambient Temperature | 10-35℃,RH<80% |
Storage Conditions | -10-40℃,RH<90% |
Physical Characteristics | |
Cooling System | Water-Cooled |
Water Temperature (laser inlet) | 25℃ |
MMEPU-355-15
The high-energy ultraviolet laser, characterized by a wavelength of 355nm, features a single-pulse energy of 1.5mJ and a high peak power.
It efficiently cuts SiC and diamond wafers, directly severing the wafers and metal layers with high efficiency and a minimal edge breakage
(<2um).
Features:
- The laser power is 18-30W;
- Adopt UV-clean patented technology to solve power attenuation worry free used;
- The service life exceeds 20000 hours, maintenance is free, and no need for regular commissioningor calibration;
- Excellent beam quality M² < 1.3, simple process, and higher efficiency;
- 3-layer protection, protection grade IP65, more suitable for harsh working environment;
- Rugged, easy to install, and easy to integrate.
Application:
- Sic, diamond wafer dicing
- Drilling and cutting of wafers
- Ceramic scribing and drilling