Model No. | MMEPG-532-30 | |
Optical Characteristics | ||
Wavelength (nm) | 532nm | |
Average Power (W) | >30W@50kHz | |
Single Pulse Energy (uJ) | ~500uJ@50kHz | |
Pulse Width (ns) | 20ns@60kHz | |
Frequency range | 50-500kHz | |
Pulse Stability | <3% rms | |
Long Term Stability | <±3% | |
Beam Characteristics | ||
Polarization Ratio | Vertical;>100:1 | |
Beam Diameter | 6mm(Built in beam expander) | |
Beam Circularity | >90% | |
Spatial Mode | TEM00, M² <1.3 | |
Operating Specifications | ||
Warm-up Time | <15 minutes from cold start | |
Electrical Requirement | DC24V, 600W | |
Ambient Temperature | 10-35℃, RH<80% | |
Storage Conditions | -10-40℃,RH<90% | |
Physical Characteristics | ||
Cooling System | Water-Cooled | |
Water Temperature (laser inlet) | 25℃ |
MMEPG-532-30
Its extremely high power stability guarantees long-term operation. At the same time, it has high single pulse energy, which can produce higher energy density in a short time, thus better dealing with materials with higher hardness such as SiC.
Features:
- Adopt UV-clean patented technology to solve power attenuation, worry- free use;
- The service life exceeds 20000 hours, maintenance free and regular commissioning is not required;
- Excellent beam quality M²< 1.3, simple process and higher efficiency;
- 3-layer protection, protection grade IP65, more suitable for harsh working environment;
- Rugged, easy to install and easy to integrate.
Application:
- Solar cell scribing
- PCB & FPC splitting and cutting
- Silicon wafer Scribing
- Film cutting