Model No. | MMEPU-355-15-HE | |
Optical Characteristics | ||
Wavelength (nm) | 355nm | |
Average Power (W) | >15W@10kHz | |
Single Pulse Energy (uJ) | ~1500uJ@10kHz | |
Pulse Width (ns) | ~30ns@60kHz | |
Frequency range | 10-20kHz | |
Pulse Stability | <3% rms | |
Long Term Stability | <±3% | |
Beam Characteristics | ||
Polarization Ratio | Horizontal;>100:1 | |
Beam Diameter | 〜1mm(at exit) | |
Beam Circularity | >90% | |
Spatial Mode | TEM00, M² <1.3 | |
Operating Specifications | ||
Warm-up Time | <15minutes from cold start | |
Electrical Requirement | DC17.5V,350W | |
Ambient Temperature | 10-35℃,RH<80% | |
Storage Conditions | -10-40℃,RH<90% | |
Physical Characteristics | ||
Cooling System | Water-Cooled | |
Water Temperature (laser inlet) | 25℃ |
MMEPU-355-15-HE
The high-energy ultraviolet laser, characterized by a wavelength of 355nm, features a single-pulse energy of 1.5mJ and a high peak power. It efficiently cuts SiC and diamond wafers, directly severing the wafers and metal layers with high efficiency and a minimal edge breakage (<2um).
Features
- The laser power is 15W;
- Adopt UV-clean patented technology to solve power attenuation worry free used;
- The service life exceeds 20000 hours, maintenance is free, and no need for regular commissioning or calibration;
- Excellent beam quality M² < 1.3, simple process, and higher efficiency;
- 3-layer protection, protection grade IP65, more suitable for harsh working environment;
- Rugged, easy to install, and easy to integrate.
Application
- Sic, diamond wafer scribing and drilling
- Ceramic scribing and drilling